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SOI based nanowire single-electron transistors: design, simulation and process development
(Universiti Malaysia Perlis, 2008)
One of the great problems in current large-scale integrated circuits is increasing power
dissipation in a small silicon chip. Single-electron transistors which operate by means of one-by-one electron transfer, is relatively ...
Studying the effect of X-ray radiation on the electrical properties of diodes 1N1405
(Universiti Malaysia Perlis, 2008)
The diode 1N1405 type silicon is subjected to different levels of energy and time
irradiation. We have about three times; at every time we have measured the forward and
reverse bias voltage of the diode to know what is ...
Effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector
(Universiti Malaysia Perlis, 2009)
In this paper we report on the effect of rapid thermal annealing (RTA) on the characteristics of diffused crystalline p-n Si one-dimensional (1-D) position sensitive detector (PSD). The Si-PSDs are made with planer technology ...
Multilayer antireflection coatings model for red emission of silicon for optoelectronic applications
(Universiti Malaysia Perlis, 2009)
A model, based on the Transfer Matrix Method (TMM) of multilayer is used to evaluate the transmittance at the central wavelength 720 nm of Si when using Ge, SiO2 nd Si as multilayer thin film coatings. In this study, the ...
Influence of rapid thermal oxidation process on the optoelectronic characteristics of PSI devices
(Universiti Malaysia Perlis, 2009)
The morphological properties of the freshly and oxidized porous silicon at oxidation time (60, 90) sec were studied. Eyes, can see a blue emission from PSi after thermal oxidation, we can obvious increasing energy gab, ...
Modelling of the film thickness effecton the carrier's mobility in polysilicon thin film transistors
(Universiti Malaysia Perlis, 2009)
The transfer characteristics modelisation of the Mosfet's structure allows us to simulate the doping effect, the grains size, the layer thickness as well as others parameters of the transistor. The purpose of this work is ...
Studying the different effects of gamma and x-ray irradiation on the electrical properties of silicon diode type 1N1405
(Universiti Malaysia Perlis, 2009)
The silicon diode types 1N1405 subjected to different types of radiation like (x-ray and y-radiation), it is measured by the foward and reverse bias voltage before and after irradiation, so this research study the different ...
2D-modeling for the simulation of current-voltage characteristics in polysilicon schottky diode deposited by LPCVD and SAPCVD methods
(Universiti Malaysia Perlis, 2009)
The aim of this work is to compare the quality of the Schottky contact obtained between Silver and the un-doped polysilicon layer deposited on glass substrate (Corning 1737) by using two techniques: Lower Pressure Chemical ...
Design and fabrication of uniform aluminium pores for planar microfiltration system
(Universiti Malaysia Perlis (UniMAP), 2020-12)
This paper presents a design and fabrication of a fluid filtration system for separating
biological molecules through uniform pores in silicon-based planar microfiltration system.
The study is aimed to find a simple ...