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Gate oxice leakage in poly-depleted nanoscale-MOSFET: a quantum mechanical study
(Universiti Malaysia Perlis, 2011)
In this paper, we investigate the effect of depletion and doping variation in the poly-silicon on the direct tunneling current of an ultra thin oxide n-MOSFET. The one dimension (1-D) poly silicon depletion effect has been ...
Analytical modeling of energy quantization effects in nanoscale mosfets
(Universiti Malaysia Perlis, 2012)
In this paper, we have studied and developed an analytical model for the inversion layer quantization in nano-metal oxide semiconductor field effect oxide (MOSFET) using the variation approach. Explicit surface potential ...
Quantum mechanical direct leakage currents in a sub 10 nm mosfet: a rigorous modeling study
(Universiti Malaysia Perlis, 2012)
In this paper, we have developed a rigorous model for the quantum mechanical source to drain electron/hole tunneling in sub 10nm nanometer scale metal-oxide-semiconductor field effect transistor (MOSFETs). Inversion layer ...