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dc.contributor.authorAmiza, Rasmi
dc.contributor.authorUda, Hashim
dc.date.accessioned2008-09-16T04:05:02Z
dc.date.available2008-09-16T04:05:02Z
dc.date.issued2005
dc.identifier.citationJournal of Engineering Research and Education, vol. 2, 2005, pages 31-50.en_US
dc.identifier.issn1823-2981
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/2283
dc.identifier.urihttp://jere.unimap.edu.myen_US
dc.descriptionLink to publisher's homepage at http://jere.unimap.edu.myen_US
dc.description.abstractSingle-electron transistor (SET) is a key element in our research field where device operation is based on one-by-one electron through the channel utilizing the Coulomb blockade effect. The SET are often discussed as elements of nanometer scale because SET can be made very small and can detect the motion of individual electrons. However, SET has low voltage gain, high input impedances, and sensitive to random background charges. This makes it unlikely that SET would ever replace field-effect transistor (FET) in applications where large voltage gain or low output impedance is necessary. In this paper, we provide an overview of research developments of SET. The theoretical study of single electronics include orthodox theory, coulomb blockade, tunneling effects, and Kondo effect are discussed. On the other hand, the methods for modeling and simulation single-electron circuit are reviewed.en_US
dc.language.isoenen_US
dc.publisherKolej Universiti Kejuruteraan Utara Malaysiaen_US
dc.subjectSingle-electron transistor (SET)en_US
dc.subjectOrthodox theoryen_US
dc.subjectCoulomb blockadeen_US
dc.subjectTunneling effectsen_US
dc.subjectQuantum doten_US
dc.subjectKondo effecten_US
dc.subjectModelingen_US
dc.subjectSimulationen_US
dc.subjectTransistorsen_US
dc.subjectTransistors -- Design and constructionen_US
dc.titleSingle-Electron Transistors (SET): literature reviewen_US
dc.typeArticleen_US


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