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Organic thin film transistor memories with carbon nanodots fabricated by focused ion beam chemical vapor deposition
(American Institute of Physics, 2009-06-01)
Metal-insulator-semiconductor field effect transistor (MISFET) structures with a nanocrystal carbon (nc-C) embedded in SiO2 thin films using a focused ion beam chemical vapor deposition (FIBCVD) system with a precursor of ...
Development of nanogap automated permittivity measurement system for DNA hybridization detection kit
(Institute of Electrical and Electronics Engineering (IEEE), 2009-12-14)
The Nanogap Automated Permittivity Measurement System (APMS) are fabricated as low cost, portable and label free DNA hybridization detection kit. The nanogap capacitor can react as a dna sensor. The difference in dielectric ...
Technical study of digital display using Peripheral Interface Controller (PIC) microcontroller based system
(Universiti Malaysia Pahang, 2009-06-20)
Digital display system is the most
popular technology and most compatible with the
embedded system devices. The word digital is
most commonly used in computing and
electronics, especially where real-world
information ...
Pressure effect on Si quantum-dot potential
(American Institute of Physics, 2009-06-01)
Application study of the quantum dot potential as a function of hydrostatic pressure for Si has been presented. This study has been calculated by means of our recent model using empirical pseudopotential method. The effect ...
Development of nanogap based dielectric biosensor for label-free medical diagnostic analytical measurement
(Universiti Malaysia Pahang, 2009-06-20)
Biosensor with electrode distances
75 nm and highly sensitive and selective is
proposed in this research. The target application is
the label-free detection of bio-molecular
interaction for medical diagnostic ...
Design of digital control frequency sinusoidal wave generator for dielectric analyzer
(Universiti Malaysia Pahang, 2009-06-20)
The dielectric analyses are usually
done using capacitance measurement technique. A
set of sinusoidal wave frequency are applied to the
capacitance. This paper is about the design of
digital control frequency of ...
Pattern designed for combination of optical lithography and electron beam lithography
(Universiti Malaysia Pahang, 2009-06-20)
In this paper the fabricated pattern of
nanometer and micrometer structures created with
electron beam lithography (EBL) and optical
lithography on silicon on insulator (SOI) material
is presented. The resist used to ...
Man-2403 resist development for electron beam lithography process
(Universiti Malaysia Pahang, 2009-06-20)
Line-width of resist patterns is more
susceptible to the developing time than the
thickness of the undeveloped resist. This project
focused on the development of MaN-2403 resist
for e-beam lithography process. The ...
Electrode design and planar uniformity of anodically etched small area porous silicon
(American Institute of Physics, 2009-06-01)
Porous silicon layer microstructure is sensitive to many parameters, which need to be controlled during etching. These include not only anodization time, current density, applied potential and electrolyte composition but ...
A silicon-oxide-silicon vertically separated electrode nanogap device structure
(American Institute of Physics, 2009-06-01)
In this study, we present a simple method to form a nanogap between two silicon contacts separated by a thin oxide gap. We also demonstrate the validity of dielectric spectroscopy results of two wafer samples (different ...