dc.contributor.author | Nur Ruzana Bohari | |
dc.date.accessioned | 2008-09-08T12:42:37Z | |
dc.date.available | 2008-09-08T12:42:37Z | |
dc.date.issued | 2008-04 | |
dc.identifier.uri | http://dspace.unimap.edu.my/123456789/1991 | |
dc.description | Access is limited to UniMAP community. | en_US |
dc.description.abstract | This project entitled Effect of Diffusion Coefficient and Junction Depth on Variation of Temperature and Energy is carry out to find the effect of the junction depth and the diffusion coefficient and how temperature and energy is dependence. The
purposes are to calculate the diffusion coefficient with various value of temperature and energy (activation energy), yet to observe how of temperature and energy (implantation energy) correspondence to the junction depth by simulation. The calculation is done using MahCAD14 while TSUPREM4 software used to simulate the design. By these two (2) methods, the temperature and energy dependent in both diffusion coefficient and junction depth can be approved. There are the problems and limitations and how to overcome the difficulties. There are also recommendation and commercialization potential discussed in the final chapter of this thesis. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Universiti Malaysia Perlis | en_US |
dc.subject | Diffusion | en_US |
dc.subject | Semiconductors | en_US |
dc.subject | Negative metal oxide semiconductors (NMOS) | en_US |
dc.subject | Integrated circuits | en_US |
dc.subject | Silicon | en_US |
dc.title | Temperature and energy dependence of diffusion in Solid - Effect of Diffusion Coefficient and Junction Depth | en_US |
dc.type | Learning Object | en_US |
dc.contributor.advisor | Mohd Hafiz Ismail (Advisor) | en_US |
dc.publisher.department | School of Microelectronic Engineering | en_US |