Show simple item record

dc.contributor.authorNur Ruzana Bohari
dc.date.accessioned2008-09-08T12:42:37Z
dc.date.available2008-09-08T12:42:37Z
dc.date.issued2008-04
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/1991
dc.descriptionAccess is limited to UniMAP community.en_US
dc.description.abstractThis project entitled Effect of Diffusion Coefficient and Junction Depth on Variation of Temperature and Energy is carry out to find the effect of the junction depth and the diffusion coefficient and how temperature and energy is dependence. The purposes are to calculate the diffusion coefficient with various value of temperature and energy (activation energy), yet to observe how of temperature and energy (implantation energy) correspondence to the junction depth by simulation. The calculation is done using MahCAD14 while TSUPREM4 software used to simulate the design. By these two (2) methods, the temperature and energy dependent in both diffusion coefficient and junction depth can be approved. There are the problems and limitations and how to overcome the difficulties. There are also recommendation and commercialization potential discussed in the final chapter of this thesis.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlisen_US
dc.subjectDiffusionen_US
dc.subjectSemiconductorsen_US
dc.subjectNegative metal oxide semiconductors (NMOS)en_US
dc.subjectIntegrated circuitsen_US
dc.subjectSiliconen_US
dc.titleTemperature and energy dependence of diffusion in Solid - Effect of Diffusion Coefficient and Junction Depthen_US
dc.typeLearning Objecten_US
dc.contributor.advisorMohd Hafiz Ismail (Advisor)en_US
dc.publisher.departmentSchool of Microelectronic Engineeringen_US


Files in this item

Thumbnail
Thumbnail
Thumbnail
Thumbnail
Thumbnail
Thumbnail

This item appears in the following Collection(s)

Show simple item record