Study of the temperature effect on thickness and surface roughness of SiO2

Abstract

Oxidation is one of the most important thermal processes in semiconductor fabrication. The profile of oxide layer is varied to its different applications. Many factors can affect the profile of the SiO2 layer. In this project the effect of silicon oxidation temperature, type of oxidation process and type of wafers on the thickness and surface roughness of SiO2 was investigated. The oxidation temperature is varied at 900ºC, 1000ºC and 1100ºC for both dry and wet thermal oxidation process for N-type and P-type wafer. From the experimental work, as the temperature is increase the growth rate of the oxidation is increase. The wet oxidation resulting higher growth rate but rougher surface as compare to the dry oxidation process while P-type wafer resulting smoother surface but lower growth rate compare to N-type wafer. 1100ºC is the best temperature condition for the thermal oxidation process.