| dc.contributor.author | Low Pooi Lam | |
| dc.date.accessioned | 2008-09-07T02:41:30Z | |
| dc.date.available | 2008-09-07T02:41:30Z | |
| dc.date.issued | 2008-04 | |
| dc.identifier.uri | http://dspace.unimap.edu.my/123456789/1969 | |
| dc.description | Access is limited to UniMAP community. | |
| dc.description.abstract | Physical and electrical characteristics of 0.153m Complementary Metal Oxide Semiconductor (CMOS) were studied. Fabrications of the devices were done by
TSUPREM-4 simulator and electrical characteristics extraction will done by MEDICI simulator. The scaled parameters are gate length and threshold voltage. The result for electrical characteristics does not show any saturation. There might be due to the effect of Channel Length Modulation and Short Channel Effect. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Universiti Malaysia Perlis | en_US |
| dc.subject | Metal oxide semiconductors, Complementary | en_US |
| dc.subject | CMOS transistors | en_US |
| dc.subject | Transistors | en_US |
| dc.subject | Semiconductors | en_US |
| dc.subject | Silicon | en_US |
| dc.subject | Integrated circuits | en_US |
| dc.title | Electrical characterization of 0.15µm CMOS Transistor using TSUPREM-4 and MEDICI | en_US |
| dc.type | Learning Object | en_US |
| dc.contributor.advisor | Norhawati Ahmad (Advisor) | en_US |
| dc.publisher.department | School of Microelectronic Engineering | en_US |
