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Now showing items 11-20 of 52
Effect of alignment mark architecture on alignment signal behavior in advanced lithography
(Universiti Malaya, 2007)
Alignment mark architecture is divided into two types, which depending on where the mark is defined. Alignment mark that is defined through the contact masking steps is known as contact mark and alignment mark that is ...
Nanowire formation for single electron transistor using SEM based Electron Beam Lithography (EBL) technique: Positive tone vs negative tone e-beam resist
(Nano Science and Technology Institute, 2006)
Experimental studies of nanowires formation are carried out by using Scanning Electron Microscope Based Electron Beam Lithography (EBL) Technique with critical dimensions in less than 100nm. In order to complete the design ...
Nano patterning of cone dots and nano constrictions of negative e-beam resist for single electron transistor fabrication
(Springer New York, 2007-12)
We present an optimization of nano dot of negative tone e-beam resist which is a very important step in single electron transistor fabrication process. The optimum design of dot and nano constriction plays a significant ...
SOI Single-Electron Transistors (SET) design and process development
(Kolej Universiti Kejuruteraan Utara Malaysia, 2005-05-18)
Single-electron transistor (SET) is attractive devices to use for large-scale integration. SET can be made very small,
dissipate little power, and can measure quantities of charge much faster than MOSFETs. This makes SET ...
Development of In-House MOS transistor at KUKUM Micro Fabrication Cleanroom: Microelectronic undergraduate activities
(Kolej Universiti Kejuruteraan Utara Malaysia, 2005-05-18)
This paper presents the module development of inhouse MOS transistor device at KUKUM Micro Fabrication Cleanroom. The process started with the establishment of process flow, process modules, and process parameters. Four ...
PMMA characterization and optimization for Nano Structure formation
(Kolej Universiti Kejuruteraan Utara Malaysia, 2005-05-18)
The limitations imposed on optical lithography by the wavelength of light have been overcome using electron lithography. Electron lithography offers high resolution
because of the small wavelength of the 10-50 keV electrons ...
Thermal aging study at 150 °C and 200 °C: Gold ball bonds to aluminum bond pad
(The Electrochemical Society, 2009-03-17)
This paper presents the study of the thermal aging of the gold ball bonds and aluminum bond pad at 150 °C and 200 °C for various interval times. Process decapsulation and Field Emission Scanning Electron Microscopy (FESEM) ...
Designing of masks for quantum dot single electron transistor fabrication using E-beam nanolithography
(Nano Science and Technology Institute, 2007)
Quantum dot single electron transistor (QD SET) is able to be fabricated through a joint technique of e-beam lithography (EBL), pattern dependent oxidation (PADOX) and high density plasma etching. In this research, we have ...
Reproducibility of silicon single electron quantum dot transistor
(Nano Science and Technology Institute, 2006)
In principle, based on the form of tunnel junction, single electron transistor (SET) can be classified into four types, i.e. nanowire SET, quantum dot SET, nanotube SET and point contact SET. Another classification is SET ...
Borophosphosilicate glass (BPSG) reflow characterization for submicron CMOS technology
(Universiti Kebangsaan Malaysia, 2007)
This paper involves the planarization of borophosphosilicate glass (BPSG) film using a new recipe for annealing process to improve the borophosphosilicate glass (BPSG) film flatness after reflow. This improvement is for ...