Improvement of SiGe HBT Design and Technology Performance using Device Simulation

Abstract

Simulation of the effect of various design parameters on the performance of the HBT is essential for obtaining the optimized design. This is based on the requirement for a reliable computation of the HBT performance. Accurate doping profiles are needed for determining the base resistance and related characteristics. Reliable values of bandgap narrow (BGN), effective density of states and minority and majority carrier mobilities must be determined and used. The increased spacer layer was giving the high current gain and the decrease of base layer also was giving the higher current gain. Improving current gain β will be a significant challenge as the collector and base dopant concentrations are increased. In this project, considerable work on the analysis of available data of material parameters also simulations of HBT characteristics was done with using MEDICI simulations and this work was giving the implement to improve the SiGe technology now days.