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dc.contributor.authorNoor Aini Hamimah Abd. Rahim
dc.date.accessioned2008-06-27T08:31:43Z
dc.date.available2008-06-27T08:31:43Z
dc.date.issued2007-03
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/1333
dc.description.abstractRIE etched wet silica-on-silicon analysis is more to surface roughness analysis which analysis on silica substrate after plasma etching especially on de-ionized water droplets testing for fluid wettability scope. The thick oxide is needed for RIE purpose and characterized the etching and surface profile using Atomic Force Microscope. The contact angles measurement is required for the wettability analysis thus to characterized the de-ionized water droplets profile using optical inspection. This contact angles must be more than 90° for non-wetting profile or less than 90° for wetting profile. All the entire measurements angles allowed gives the silica substrate surface analysis results that related to RIE etched wet silica-on-silicon analysis. In this project, all the contact angles are wetting profile which is homogeneous types.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlisen_US
dc.subjectSilicaen_US
dc.subjectReactive Ion Etching (RIE)en_US
dc.subjectSilica-on-silicon analysisen_US
dc.subjectSurface roughness analysisen_US
dc.subjectAtomic Force Microscopeen_US
dc.subjectWet-Silica-On-Silicon Analysisen_US
dc.titleReactive Ion Etching (RIE) Etched Wet-Silica-On-Silicon Analysis for Fluid Wettabilityen_US
dc.typeLearning Objecten_US
dc.contributor.advisorPrabakaran Poopalan, Assoc. Prof. Dr. (Advisor)en_US
dc.publisher.departmentSchool of Microelectronic Engineeringen_US


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