Search
Now showing items 1-3 of 3
A systematic dry etching process for profile control of quantum dots and nanoconstrictions
(Elsevier B.V., 2007-08)
In essence, quantum dot dimensions and others can be laterally and vertically defined by using either bottom up or top down methods respectively. In fabrication that uses top down method, etch process hold a chief role. ...
Designing of masks for quantum dot single electron transistor fabrication using E-beam nanolithography
(Nano Science and Technology Institute, 2007)
Quantum dot single electron transistor (QD SET) is able to be fabricated through a joint technique of e-beam lithography (EBL), pattern dependent oxidation (PADOX) and high density plasma etching. In this research, we have ...
Reproducibility of silicon single electron quantum dot transistor
(Nano Science and Technology Institute, 2006)
In principle, based on the form of tunnel junction, single electron transistor (SET) can be classified into four types, i.e. nanowire SET, quantum dot SET, nanotube SET and point contact SET. Another classification is SET ...