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Nanowire formation for single electron transistor using SEM based Electron Beam Lithography (EBL) technique: Positive tone vs negative tone e-beam resist
(Nano Science and Technology Institute, 2006)
Experimental studies of nanowires formation are carried out by using Scanning Electron Microscope Based Electron Beam Lithography (EBL) Technique with critical dimensions in less than 100nm. In order to complete the design ...
PMMA characterization and optimization for Nano Structure formation
(Kolej Universiti Kejuruteraan Utara Malaysia, 2005-05-18)
The limitations imposed on optical lithography by the wavelength of light have been overcome using electron lithography. Electron lithography offers high resolution
because of the small wavelength of the 10-50 keV electrons ...
Design and process development of silicon nanowire based DNA biosensor using electron beam lithography
(Institute of Electrical and Electronics Engineering (IEEE), 2008-12-01)
Silicon nanowires (SiNWs) have their unique feature such as similar diameters to biomolecules, chemically tailorable physical properties, enable to apply in biomolecule detection and can be fabricated as a high performance ...