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Heteroepitaxial growth of vacuum-evaporated Si-Ge films on nanostructured silicon substrates
(Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 2015)
In this study, a low-cost vacuum-evaporated technique is used in the heteroepitaxial growth of Si-Ge films. Three different surface variations are employed: i.e. polished Si, Si micropyramids and Si nanopillars profiles. ...