Now showing items 1-3 of 3

    • GaN Schottky barrier photodiode on Si (1 1 1) with low-temperature-grown cap layer 

      Chuah, Lee Siang; Z., Hassan; H., Abu Hassan; Naser Mahmoud, Ahmed (Elsevier B.V., 2009-07)
      In this work, GaN films were grown on three-inch silicon substrates by plasma-assisted molecular beam epitaxy (PAMBE) with AlN (about 200 nm) as the buffer layer. Finally, a thin AlN cap layer (50 nm) was grown on the GaN ...
    • Nano-silver microcavity enhanced UV GaN light emitter 

      Naser Mahmoud, Ahmed; Zaliman, Sauli; Uda, Hashim; Zul Azhar, Zahid Jamal (Inderscience Enterprises Limited, 2009)
      We report results of measurements that help to clarify the role of silver in the reflection of UV emission light from GaN. A GaN as an active layer was sandwiched between two silver metal reflectors. GaN layer on sapphire ...
    • Optical investigations of GaN deposited nano films using pulsed laser ablation in ethanol 

      Husam Aldin A. Abdul Amir; Ali. A.Alwahib (Universiti Malaysia Perlis (UniMAP), 2022-04)
      We provide an optical study on GaN thin film testing created by pulsed laser (ablation) in liquid. This study applied six different energies for ablated GaN nanoparticles in the liquid. According to the XRD test, the ...