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Now showing items 21-23 of 23
Polysilicon Process Development – The Effect Of PECVD Process Parameters On The Film Characteristics
(Universiti Malaysia Perlis, 2007-03)
Thin polycrystalline silicon film has been used in the wide range of applications in
the production of integrated circuits and other electronic products. Traditionally,
polycrystalline silicon is deposited using Low ...
Simulation on Parameter and Characteristics Extraction Between Two Simulation Packages (Synopsys and PSpice)
(Universiti Malaysia Perlis, 2007-03)
The progress of silicon technologies in the last twenty years has traced the path to
the unprecedented revolution of information technologies, which has changed everybody’s
lifestyles. Apparently, this has happened with ...
Simulation for forming Shallow Trench Isolation in the IC using TCAD tools
(Universiti Malaysia Perlis, 2008-04)
A simulation for forming shallow trench isolation (STI) in the integrated circuit
(IC) is introduced. Firstly, using the Taurus Workbench-tools, the first silicon oxide layer and a silicon nitride layer are formed ...