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Investigation and Modeling of Boron Diffusion Reduction in Silicon by Flourine Implantation using Numerical Simulation
(Universiti Malaysia Perlis, 2007-05)
With the increased interest in the use of fluorine co-implantation with boron for
boron diffusion reduction in the fabrication of semiconductor devices, it is important to
understand the mechanisms by which fluorine ...
Theoretical study, simulation & fabrication of Dry Oxidation in terms of SiO2 layer thickness, resistivity & surface roughness
(Universiti Malaysia Perlis, 2008-04)
Oxidation is a process used in wafer fabrication. The goal of oxidation is to grow
a high quality oxide layer on a silicon substrate. During oxidation a chemical reaction between the oxidants and the silicon atoms produces ...
Electrical characterization of 0.15µm CMOS Transistor using TSUPREM-4 and MEDICI
(Universiti Malaysia Perlis, 2008-04)
Physical and electrical characteristics of 0.153m Complementary Metal Oxide Semiconductor (CMOS) were studied. Fabrications of the devices were done by
TSUPREM-4 simulator and electrical characteristics extraction will ...
Study of acceleratin voltage influence the Conical structure during Electron Beam Induced Deposition (EBID)
(Universiti Malaysia Perlis, 2008-03)
Electron beam induced deposition (EBID) is a well established technique for highresolution
direct material deposition from the gas phase onto a substrate. A finely focused electron beam of a scanning electron microscope ...
The study on the effects of varying Dopant concentration and Diffusion Time in the design of Silicon Avalanche Diode with minimum Vbr of 120v+20% by simulation
(Universiti Malaysia Perlis, 2008-04)
Technology CAD (TCAD) refers to the use of computer simulation to model semiconductor processing and device operation. TCAD has two major functions which are process simulation and device simulation. In this project, ...
Study of Semi-Recessed LOCOS for Quasi-nanoscale CMOS Device Isolation
(Universiti Malaysia Perlis, 2007-03)
This project is entitled as semi-recessed LOCOS for CMOS device isolation. Local oxidation (LOCOS) technique is a widely used method for device isolation in semiconductor process integration. It is a simple, cheap yet and ...
Temperature and energy dependence of diffusion in Solid - Effect of Diffusion Coefficient and Junction Depth
(Universiti Malaysia Perlis, 2008-04)
This project entitled Effect of Diffusion Coefficient and Junction Depth on Variation of Temperature and Energy is carry out to find the effect of the junction depth and the diffusion coefficient and how temperature and ...
Simulation, fabrication and electrical characterization of p-Si capacitor design structure
(Universiti Malaysia Perlis, 2008-03)
Technology CAD (TCAD) refers to the use of computer simulation to model semiconductor processing and device operation. TCAD has two major functions which are process simulation and device simulation. It performs the ...
Study on diffusivity of Gallium dopant in Silicon using Spin On Dopant (SOD) technique
(Universiti Malaysia Perlis, 2008-03)
Diffusion and ion implantation are two major processes by which chemical species or dopant are introduced into a semiconductor such as silicon to form the electronic
structure. The diffusion process is a method to control ...
Microfluidic Poly-Si Electrodes Capacitor ( Fabrication & Testing )
(Universiti Malaysia Perlis, 2007-03)
In this project, I have to design, fabricate and testing a Microfluidic capacitor. The
dielectric insulator is replaced with a dielectric fluid (deionized water) instead of usual solid state materials. The conductive ...