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Theoretical study, simulation & fabrication of Dry Oxidation in terms of SiO2 layer thickness, resistivity & surface roughness
(Universiti Malaysia Perlis, 2008-04)
Oxidation is a process used in wafer fabrication. The goal of oxidation is to grow
a high quality oxide layer on a silicon substrate. During oxidation a chemical reaction between the oxidants and the silicon atoms produces ...
Electrical characterization of 0.15µm CMOS Transistor using TSUPREM-4 and MEDICI
(Universiti Malaysia Perlis, 2008-04)
Physical and electrical characteristics of 0.153m Complementary Metal Oxide Semiconductor (CMOS) were studied. Fabrications of the devices were done by
TSUPREM-4 simulator and electrical characteristics extraction will ...
Study of acceleratin voltage influence the Conical structure during Electron Beam Induced Deposition (EBID)
(Universiti Malaysia Perlis, 2008-03)
Electron beam induced deposition (EBID) is a well established technique for highresolution
direct material deposition from the gas phase onto a substrate. A finely focused electron beam of a scanning electron microscope ...
The study on the effects of varying Dopant concentration and Diffusion Time in the design of Silicon Avalanche Diode with minimum Vbr of 120v+20% by simulation
(Universiti Malaysia Perlis, 2008-04)
Technology CAD (TCAD) refers to the use of computer simulation to model semiconductor processing and device operation. TCAD has two major functions which are process simulation and device simulation. In this project, ...
Temperature and energy dependence of diffusion in Solid - Effect of Diffusion Coefficient and Junction Depth
(Universiti Malaysia Perlis, 2008-04)
This project entitled Effect of Diffusion Coefficient and Junction Depth on Variation of Temperature and Energy is carry out to find the effect of the junction depth and the diffusion coefficient and how temperature and ...
Simulation, fabrication and electrical characterization of p-Si capacitor design structure
(Universiti Malaysia Perlis, 2008-03)
Technology CAD (TCAD) refers to the use of computer simulation to model semiconductor processing and device operation. TCAD has two major functions which are process simulation and device simulation. It performs the ...
Study on diffusivity of Gallium dopant in Silicon using Spin On Dopant (SOD) technique
(Universiti Malaysia Perlis, 2008-03)
Diffusion and ion implantation are two major processes by which chemical species or dopant are introduced into a semiconductor such as silicon to form the electronic
structure. The diffusion process is a method to control ...
Study of aspect ratio performance on Silicon Oxide wet etching by using Profilometer, AFM and SEM
(Universiti Malaysia Perlis, 2008-03)
A study of aspect ratio performance on silicon oxide is developing to predict the
oxide profile on surface of wafer. The main focus of this project is to perform and
produce a high profile of silicon oxide under profiler ...
Single Crystal SiC Capacitive pressure sensor design and analysis using MEMS Pro L-Edit and Samcef Field & Oofelie software
(Universiti Malaysia Perlis, 2008-03)
Single crystal 3C-SiC capacitive pressure sensors are proposed for high-temperature sensing applications. SiC is an attractive material for harsh environment micromachined transducers due to its outstanding electrical, ...
Design and simulation of Gallium Arsenide based Schottky diodes for RF applications
(Universiti Malaysia Perlis, 2008-04)
Today, being the dawn of a new RF technology wave, the requirement of making semiconductor device which have greater speed in performance, which is realized either as a higher maximum frequency of operation or higher logic ...