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Electrical characterization of 0.15µm CMOS Transistor using TSUPREM-4 and MEDICI
(Universiti Malaysia Perlis, 2008-04)
Physical and electrical characteristics of 0.153m Complementary Metal Oxide Semiconductor (CMOS) were studied. Fabrications of the devices were done by
TSUPREM-4 simulator and electrical characteristics extraction will ...
Temperature and energy dependence of diffusion in Solid - Effect of Diffusion Coefficient and Junction Depth
(Universiti Malaysia Perlis, 2008-04)
This project entitled Effect of Diffusion Coefficient and Junction Depth on Variation of Temperature and Energy is carry out to find the effect of the junction depth and the diffusion coefficient and how temperature and ...
Study of the temperature effect on thickness and surface roughness of SiO2
(Universiti Malaysia Perlis, 2008-04)
Oxidation is one of the most important thermal processes in semiconductor fabrication. The profile of oxide layer is varied to its different applications. Many factors can affect the profile of the SiO2 layer. In this ...
Effect of different dielectric materials for Ultrathin Oxide
(Universiti Malaysia Perlis, 2008-04)
This paper I want to describe the reliability study of the effect of different dielectric materials for ultrathin oxide. The alternative high–k gate dielectrics are to provide a substantially thicker (physical thickness) ...
The influence of the accelerating voltages on the growth of the square structure during Electron Beam Induced Deposition (EBID) method
(Universiti Malaysia Perlis, 2008-04)
Electron beam induced deposition (EBID) is a method for high-resolution direct material deposition from the gas phase in the Scanning Electron Microscopy (SEM) onto
a substrate. In this project, EBID method has been used ...
Study on diffusivity of Gallium dopant in Silicon using Spin On Dopant (SOD) technique
(Universiti Malaysia Perlis, 2008-03)
Diffusion and ion implantation are two major processes by which chemical species or dopant are introduced into a semiconductor such as silicon to form the electronic
structure. The diffusion process is a method to control ...
Design and analysis of Floating Point divider
(Universiti Malaysia Perlis, 2008-04)
As the advances of VLSI technology, low power design has become an important topic in
VLSI design. Scaling down supply voltage is an effective way for power reduction because of its quadratic relationship to dynamic power. ...
Design and simulation of Gallium Arsenide based Schottky diodes for RF applications
(Universiti Malaysia Perlis, 2008-04)
Today, being the dawn of a new RF technology wave, the requirement of making semiconductor device which have greater speed in performance, which is realized either as a higher maximum frequency of operation or higher logic ...
Electrical characterization of 0.13 µm NMOS transistor with Retrograde Well and Halo Implant Structure Respectively
(Universiti Malaysia Perlis, 2008-03)
This project is about the usage of Technology Computer Aided Design (TCAD) in
order to construct NMOS transistor with gate length 0.13 µm. TCAD is use in computer
simulation as process modelling and device operation. ...
Study of the thickness of the Silicon Dioxide on wafer using Dry and Wet Oxidation method
(Universiti Malaysia Perlis, 2008-03)
Studies of the interaction of O2 and O with Si(100) at a fundamental level are reviewed.
Both atomic and molecular chemisorbed species have been found on these surfaces. STM studies have given a great deal of information ...