Browsing School of Microelectronic Engineering (FYP) by Subject "Silicon oxide"
Now showing items 1-6 of 6
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Simulation for forming Shallow Trench Isolation in the IC using TCAD tools
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)A simulation for forming shallow trench isolation (STI) in the integrated circuit (IC) is introduced. Firstly, using the Taurus Workbench-tools, the first silicon oxide layer and a silicon nitride layer are formed ... -
Study of aspect ratio performance on Silicon Oxide wet etching by using Profilometer, AFM and SEM
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)A study of aspect ratio performance on silicon oxide is developing to predict the oxide profile on surface of wafer. The main focus of this project is to perform and produce a high profile of silicon oxide under profiler ... -
Study of the effect of different Gases parameter in Dry Etching process on Etch Rate profile
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)The principal focus of this project is dry etching technique by using the Inductively Couple Plasma-Reactive Ion Etching (ICP-RIE). An (ICP) system was chosen because of its high plasma density and low cost relative to ... -
Study of the temperature effect on thickness and surface roughness of SiO2
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Oxidation is one of the most important thermal processes in semiconductor fabrication. The profile of oxide layer is varied to its different applications. Many factors can affect the profile of the SiO2 layer. In this ... -
Study of the thickness of the Silicon Dioxide on wafer using Dry and Wet Oxidation method
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)Studies of the interaction of O2 and O with Si(100) at a fundamental level are reviewed. Both atomic and molecular chemisorbed species have been found on these surfaces. STM studies have given a great deal of information ... -
Theoretical study, simulation & fabrication of Dry Oxidation in terms of SiO2 layer thickness, resistivity & surface roughness
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Oxidation is a process used in wafer fabrication. The goal of oxidation is to grow a high quality oxide layer on a silicon substrate. During oxidation a chemical reaction between the oxidants and the silicon atoms produces ...