Now showing items 1-2 of 2

    • Optimization of Nitride deposition process using Taguchi method 

      Low Zen Shiang (Universiti Malaysia PerlisSchool Of Microelectronic Engineering, 2008-04)
      The process of plasma enhanced chemical vapor deposition silicon nitride film which is used as barrier layer for the doped oxide in premetal dielectric (PMD) application and optimized using Design of Experiment (DOE) ...
    • Simulation for forming Shallow Trench Isolation in the IC using TCAD tools 

      Mohd Faiz Mohd Fauzan (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)
      A simulation for forming shallow trench isolation (STI) in the integrated circuit (IC) is introduced. Firstly, using the Taurus Workbench-tools, the first silicon oxide layer and a silicon nitride layer are formed ...