Browsing School of Microelectronic Engineering (FYP) by Subject "Silica"
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Gate Oxide Integrity (GOI) Characterization For Deep Submicron CMOS Device
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)Since the early days of Very Large Scale Integration (VLSI) era, the scaling of gate oxide thickness has been instrumental in controlling the short channel related effects in state-of-the-art device structure, as MOS gate ... -
Polysilicon Process Development – The Effect Of PECVD Process Parameters On The Film Characteristics
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)Thin polycrystalline silicon film has been used in the wide range of applications in the production of integrated circuits and other electronic products. Traditionally, polycrystalline silicon is deposited using Low ... -
Reactive Ion Etching (RIE) Etched Wet-Silica-On-Silicon Analysis for Fluid Wettability
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)RIE etched wet silica-on-silicon analysis is more to surface roughness analysis which analysis on silica substrate after plasma etching especially on de-ionized water droplets testing for fluid wettability scope. The thick ...