Browsing School of Microelectronic Engineering (FYP) by Subject "Metal oxide semiconductor field-effect transistors"
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The study of the effect of MOS transistor scaling on the critical device parameters
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-04)Since the invention of transistors some 30 years ago, CMOS devices have been scale down aggressively in each technology generations to achieve higher integration density and performance. The device shrinkage allow denser ...