Browsing School of Microelectronic Engineering (FYP) by Subject "CMOS transistors"

Now showing items 1-6 of 6

    • 16-Bits High Speed Carry Select Adder 

      Nur Syuhada Muhammad Khariri (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)
      This report presents the design, performance evaluation of two design of 16-bit carry select adder. The layout for the high speed 16-bits carry-select adder was present in this report. The comparison of both designs is to ...

    • Coherent effect on LOCOS and STI technique for 0.18 µm CMOS technology using Taurus Workbench 

      Wan Shafie Wan Sulaiman (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)
      LOCOS (Local Oxidation of Silicon) and STI (Shallow Trench Isolation) are two isolation techniques used in integrated circuit fabrication. Further device scaling using LOCOS technique is no longer practical for technology ...

    • Comparisons of 2 Bit Mirror Adder, Dynamic Adder and Pipelined Adder Using Mentor Graphics 

      Kamarul Azman Gesly (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-04)
      In this project the main topology of two bit adder including the most interesting of those recently proposed, are compared for delay, power dissipation, area and power delay product (PDP) . The comparison has been performed ...

    • Electrical characterization of 0.13µm CMOS Transistor using TSUPREM-4 and MEDICI 

      Rusnita Rafee (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)
      Technology CAD (TCAD) refers to the use of computer simulation to model semiconductor processing and device operation. TCAD has two major functions which are process simulation and device simulation. It performs the ...

    • Electrical characterization of 0.15µm CMOS Transistor using TSUPREM-4 and MEDICI 

      Low Pooi Lam (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)
      Physical and electrical characteristics of 0.153m Complementary Metal Oxide Semiconductor (CMOS) were studied. Fabrications of the devices were done by TSUPREM-4 simulator and electrical characteristics extraction will ...

    • Simulation of Ion Implantation using Monte Carlo Method for Investigation on Ion Trajectories 

      Zainab Ramli (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-04)
      The goal of simulating the ion implantation is to predict the distribution of implanted ions in the target and also to predict the amount of damage generated in the target. During ion implantation process, accelerated ions ...