Browsing School of Microelectronic Engineering (FYP) by Author "Ruslinda A. Rahim (Advisor)"
Now showing items 1-5 of 5
-
Coherent effect on LOCOS and STI technique for 0.18 µm CMOS technology using Taurus Workbench
Wan Shafie Wan Sulaiman (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)LOCOS (Local Oxidation of Silicon) and STI (Shallow Trench Isolation) are two isolation techniques used in integrated circuit fabrication. Further device scaling using LOCOS technique is no longer practical for technology ... -
Simulation for forming Shallow Trench Isolation in the IC using TCAD tools
Mohd Faiz Mohd Fauzan (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)A simulation for forming shallow trench isolation (STI) in the integrated circuit (IC) is introduced. Firstly, using the Taurus Workbench-tools, the first silicon oxide layer and a silicon nitride layer are formed ... -
Study of the temperature effect on thickness and surface roughness of SiO2
Mohd Azdi Asis (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Oxidation is one of the most important thermal processes in semiconductor fabrication. The profile of oxide layer is varied to its different applications. Many factors can affect the profile of the SiO2 layer. In this ... -
Study of the thickness of the Silicon Dioxide on wafer using Dry and Wet Oxidation method
Mohamad Fadzli Ali (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)Studies of the interaction of O2 and O with Si(100) at a fundamental level are reviewed. Both atomic and molecular chemisorbed species have been found on these surfaces. STM studies have given a great deal of information ... -
Theoretical study, simulation & fabrication of Dry Oxidation in terms of SiO2 layer thickness, resistivity & surface roughness
Mohd Adam Alias (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Oxidation is a process used in wafer fabrication. The goal of oxidation is to grow a high quality oxide layer on a silicon substrate. During oxidation a chemical reaction between the oxidants and the silicon atoms produces ...