Browsing School of Microelectronic Engineering (FYP) by Author "Ramzan Mat Ayub (Advisor)"
Now showing items 1-4 of 4
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The Effect of Process Parameters on Metal Step Coverage for Aluminum by Evaporation Technique
Noraishah Azman (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)The degree to which deposited metals cover steps over topography is important to the yield and reliability of devices in very large scale integrations (VLSI). In evaporated and sputtered thin films, the most difficult steps ... -
Gate Oxide Integrity (GOI) Characterization For Deep Submicron CMOS Device
Norain Mohd Saad (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)Since the early days of Very Large Scale Integration (VLSI) era, the scaling of gate oxide thickness has been instrumental in controlling the short channel related effects in state-of-the-art device structure, as MOS gate ... -
Polysilicon Process Development – The Effect Of PECVD Process Parameters On The Film Characteristics
Mujahidun Mashuri (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)Thin polycrystalline silicon film has been used in the wide range of applications in the production of integrated circuits and other electronic products. Traditionally, polycrystalline silicon is deposited using Low ... -
The study of the effect of MOS transistor scaling on the critical device parameters
Zazurina Abd Rahman (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-04)Since the invention of transistors some 30 years ago, CMOS devices have been scale down aggressively in each technology generations to achieve higher integration density and performance. The device shrinkage allow denser ...