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    • Simulation for forming Shallow Trench Isolation in the IC using TCAD tools 

      Mohd Faiz Mohd Fauzan (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)
      A simulation for forming shallow trench isolation (STI) in the integrated circuit (IC) is introduced. Firstly, using the Taurus Workbench-tools, the first silicon oxide layer and a silicon nitride layer are formed ...