Browsing School of Microelectronic Engineering (FYP) by Subject "Silicon"
Now showing items 21-23 of 23
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The study on the effects of varying Dopant concentration and Diffusion Time in the design of Silicon Avalanche Diode with minimum Vbr of 120v+20% by simulation
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Technology CAD (TCAD) refers to the use of computer simulation to model semiconductor processing and device operation. TCAD has two major functions which are process simulation and device simulation. In this project, ... -
Temperature and energy dependence of diffusion in Solid - Effect of Diffusion Coefficient and Junction Depth
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)This project entitled Effect of Diffusion Coefficient and Junction Depth on Variation of Temperature and Energy is carry out to find the effect of the junction depth and the diffusion coefficient and how temperature and ... -
Theoretical study, simulation & fabrication of Dry Oxidation in terms of SiO2 layer thickness, resistivity & surface roughness
(Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)Oxidation is a process used in wafer fabrication. The goal of oxidation is to grow a high quality oxide layer on a silicon substrate. During oxidation a chemical reaction between the oxidants and the silicon atoms produces ...