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Electrical characterization of 0.15µm CMOS Transistor using TSUPREM-4 and MEDICI
(Universiti Malaysia Perlis, 2008-04)
Physical and electrical characteristics of 0.153m Complementary Metal Oxide Semiconductor (CMOS) were studied. Fabrications of the devices were done by
TSUPREM-4 simulator and electrical characteristics extraction will ...
Coherent effect on LOCOS and STI technique for 0.18 µm CMOS technology using Taurus Workbench
(Universiti Malaysia Perlis, 2008-04)
LOCOS (Local Oxidation of Silicon) and STI (Shallow Trench Isolation) are two isolation techniques used in integrated circuit fabrication. Further device scaling using
LOCOS technique is no longer practical for technology ...
Electrical characterization of 0.13µm CMOS Transistor using TSUPREM-4 and MEDICI
(Universiti Malaysia Perlis, 2008-04)
Technology CAD (TCAD) refers to the use of computer simulation to model semiconductor
processing and device operation. TCAD has two major functions which are process
simulation and device simulation. It performs the ...