Mohammad Nuzaihan Md Nor, Associate Professor Dr.This page provides access to scholarly publication by UniMAP Faculty members and researchershttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/402292024-03-29T07:16:31Z2024-03-29T07:16:31ZDesign and fabrication of silicon nanowire based sensorSiti Fatimah, Abd RahmanNor Azah, Yusof, Prof. Dr.Uda, Hashim, Prof. Dr.Mohammad Nuzaihan, Md Norhttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/349762014-06-02T07:46:47Z2013-01-01T00:00:00ZDesign and fabrication of silicon nanowire based sensor
Siti Fatimah, Abd Rahman; Nor Azah, Yusof, Prof. Dr.; Uda, Hashim, Prof. Dr.; Mohammad Nuzaihan, Md Nor
This paper reports the process development of silicon nanowires sensor requires both the fabrication of nanoscale diameter wires and standard integration to CMOS process. By using silicon-on-insulator (SOI) wafer as a starting material, the nanowires is fabricated using a top-down approach which involved Scanning Electron Microscope based Electron Beam Lithography method. The silicon nanowires are well developed with the smallest dimension is 65nm in width. The effect of line width and exposure dose on the pattern structure is investigated experimentally using the negative photoresist ma-N2403 for EBL. The exposure doses for the resist layer are varied in the range of 50μC/cm2 to 180μC/cm2 at 20 kV accelerating voltage with a beam current of 0.075nA. The nanowires resist masks are well developed with dimension less than 100 nm in width for the dose exposure parameters of 80μC/cm2, 100μC/cm2 and 120μC/cm2. Subsequently, the two metal electrodes which are designated as source and drain are fabricated on top of individual nanowire using conventional lithography process. Morphological, electrical and chemical characteristics have been proposed to verify the outcome of the fabricated device. Finally, the fabricated device is performed as pH level detection. Three types of standard aqueous pH buffer buffer solutions which are pH 4, pH 7 and pH 10 are used to test the electrical response of the device. The SiNWs sensor show the highest resistance value for pH 4 and the lowest resistance value for pH 10. In terms of sensitivity, the device with smaller nanowire is found to be more sensitive than larger nanowire as a result of the high surface-to-volume ratio.
Link to publisher's homepage at http://www.electrochemsci.org/
2013-01-01T00:00:00ZNegative Pattern Scheme (NPS) design for nanowire formation using scanning electron microscope based electron beam lithography techniqueMohammad Nuzaihan, Md NorUda, Hashim, Prof. Dr.Siti Fatimah, Abdul RahmanTijjani Adam, Shuwahttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/335572014-04-09T06:46:49Z2014-01-01T00:00:00ZNegative Pattern Scheme (NPS) design for nanowire formation using scanning electron microscope based electron beam lithography technique
Mohammad Nuzaihan, Md Nor; Uda, Hashim, Prof. Dr.; Siti Fatimah, Abdul Rahman; Tijjani Adam, Shuwa
In this work, we report the used of Negative Pattern Scheme (NPS) by Electron Microscope Based Electron Beam Lithography (EBL) Technique in connection with scanning electron microscope (SEM) for creating extremely fine nanowires. These patterns have been designed using GDSII Editor and directly transferred on the sample coated with ma-N 2400 Series as the negative tone e-beam resist. The NPS designs having line width of approximately 100 nm are successfully fabricated at our lab. The profile of the nanowire can be precisely controlled by this technique. The optical characterization that is applied to check the nanowires structure using SEM and Atomic Force Microscopy (AFM).
Link to publisher's homepage at http://www.ttp.net/
2014-01-01T00:00:00ZFabrication of silicon nanowires by electron beam lithography and thermal oxidation size reduction methodMohammad Nuzaihan, Md NorUda, Hashim, Prof. Dr.Nazwa, TaibTijjani Adam, Shuwahttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/335532014-04-09T06:24:03Z2014-01-01T00:00:00ZFabrication of silicon nanowires by electron beam lithography and thermal oxidation size reduction method
Mohammad Nuzaihan, Md Nor; Uda, Hashim, Prof. Dr.; Nazwa, Taib; Tijjani Adam, Shuwa
A simple method for the fabrication of silicon nanowires using Electron Beam Lithography (EBL) combined with thermal oxidation size reduction method is presented. EBL is used to define the initial silicon nanowires of dimensions approximately 100 nm. Size-reduction method is employed for reaching true nanoscale of dimensions approximately 20 nm. Dry oxidation of silicon is well investigated process for self-limited size-reduction of silicon nanowires. In this paper, successful size reduction of silicon nanowires is presented and surface topography characterizations using Atomic Force Microscopy (AFM) are reported.
Link to publisher's homepage at http://www.ttp.net/
2014-01-01T00:00:00ZCarbon nanotubes : Design and fabrication for biosensor applicationsAzniza, AbasMohammad Nuzaihan, Md NorMohd Asyraf, Mohd Zulkiflihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/307082013-12-21T03:10:15Z2012-06-18T00:00:00ZCarbon nanotubes : Design and fabrication for biosensor applications
Azniza, Abas; Mohammad Nuzaihan, Md Nor; Mohd Asyraf, Mohd Zulkifli
Carbon nanotubes or known as CNTs are allotropes of carbon with a cylindrical nanostructure. They exhibit extraordinary strength and unique electrical properties, and are efficient thermal conductors [1]. In particular, it is useful in genetic profiling of human diseases, which includes in identifying genes that are expressed in certain diseases such as cancer [2]. This research will based on design and fabricate CNTs biosensor using carbon nanotube and integrate carbon nanotube onto wafer using combination of dielectrophosis and nanomanipulation. Carbon nanotube CNTs biosensor mask are design using AUTOCAD software; there is four mask involved, first mask is Gate Formation, second mask is insulation layer third mask is source and drain and final mask forth mask is used as test channel. This process will involve conventional photolithography process, electron beam evaporator, thermal oxidation and wet etching process. To inspect and characterize carbon nanotube electrical properties it will involve tools such as SEM, AFM, Dielectric Analyzer, IV-CV and Semiconductor Parametric Analyzer system.
The 2nd
International Malaysia-Ireland Joint
Symposium on Engineering, Science and Business 2012 (IMiEJS2012) jointly organized by Universiti Malaysia Perlis and Athlone Institute of Technology in collaboration with The Ministry of Higher Education (MOHE) Malaysia, Education Malaysia and Malaysia Postgraduates Student Association Ireland (MyPSI), 18th - 19th June 2012 at Putra World Trade Center (PWTC), Kuala Lumpur, Malaysia.
2012-06-18T00:00:00Z