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Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor
(Universiti Malaysia Perlis (UniMAP), 2021-12)
In this work, we report on the processing and device characteristics of n++ GaN/AlN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs). The AlN/GaN structure is capped with a highly doped n++ GaN ...