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Technical barriers and development of Cu wirebonding in nanoelectronics device packaging
(Hindawi Publishing Corporation, 2012)
Bondpad cratering, Cu ball bond interface corrosion, IMD (intermetal dielectric) cracking, and uncontrolled post-wirebond staging are the key technical barriers in Cu wire development. This paper discusses the UHAST (unbiased ...
Wearout reliability and intermetallic compound diffusion kinetics of Au and PdCu wires used in nanoscale device packaging
(Hindawi Publishing Corporation, 2013)
Wearout reliability and diffusion kinetics of Au and Pd-coated Cu (PdCu) ball bonds are useful technical information for Cu wire deployment in nanoscale semiconductor device packaging. This paper discusses the HAST (with ...