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Virtual fabrication of 14nm gate length n-Type double gate MOSFET
(Universiti Malaysia Perlis (UniMAP), 2023-01)
Due to Moore's law, it is that predicted the channel length of a metal-oxide-semiconductor
Field Effect Transistor (MOSFET) will tend to shrink from the submicron to the nanoscale
size. Thus, precision in the manufacturing ...
Taguchi Method for p-MOS threshold voltage optimization with a gate length of 22nm
(Universiti Malaysia Perlis (UniMAP), 2023-01)
This paper describes the virtual design of a 22nm gate length p-type metal oxide
semiconductor, PMOS. Silvaco, TCAD tools were used to fabricate the device design and to
characterize the device’s electrical properties. ...