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GaN Schottky barrier photodiode on Si (1 1 1) with low-temperature-grown cap layer
(Elsevier B.V., 2009-07)
In this work, GaN films were grown on three-inch silicon substrates by plasma-assisted molecular beam epitaxy (PAMBE) with AlN (about 200 nm) as the buffer layer. Finally, a thin AlN cap layer (50 nm) was grown on the GaN ...
Stiffness properties of porous silicon nanowires fabricated by electrochemical and laser-induced etching
(Elsevier Ltd., 2011-08)
Nanowires with dimensions of few nanometers were formed on the whole etched surface. The optical analysis of silicon nanostructures was studied. Blue shift luminescence was observed at 660 nm for PS produced by electrochemical ...
New optical features to enhance solar cell performance based on porous silicon surfaces
(Elsevier B.V., 2011-05)
Electrochemical etching is used to fabricate porous silicon (PS) surfaces for both sides of the Si wafer. The effect of PS on performance of Si solar cells is investigated and the reflected mirrors are manipulated to enhance ...
Structural properties studies of GaN on 6H-SiC by means of X-ray diffraction technique
(Universiti Malaysia Perlis, 2010-06-09)
Epitaxial growth of GaN has become an interest topic in term of light emitting device fabrication. Most of the commercial GaN based device is normally grown on sapphire substrate. For power device application, SiC has been ...