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    • Extended MASTAR modeling of DIBL in UTB and UTBB SOI MOSFETs 

      Mohd Khairuddin, Md Arshad, Dr.; Raskin, Jean-Pierre, Prof.; Kilchytska, Valeriya, Dr.; Andrieu, François, Dr.; Scheiblin, Pascal; Faynot, O.; Flandre, Denis, Prof. (Institute of Electrical and Electronics Engineers (IEEE), 2012-01)
      This paper analyzes and models the drain-induced barrier lowering (DIBL) for ultrathin silicon body and ultrathin silicon body and thin buried oxide (UTBB) SOI MOSFETs. The channel depth appears as the primary factor in ...