Now showing items 1-2 of 2

    • Comparison on various developing method at clean track ACT 8 based on 0.5um CMOS Technology 

      Nazrah, Omar; Muhammad Hilmi, Othman; Anifah, Zakaria (Universiti Malaysia PerlisSchool of Materials Engineering & School of Environmental Engineering, 2010-06-09)
      Photoresist development is one of the critical steps in ensuring good critical dimension uniformity (CDU). In this paper, we demonstrate the methods by using 0.5um CMOS Technology Gate pattern. There methods used at our ...
    • Resist uniformity evaluation through swing curve phenomena 

      Uda, Hashim, Prof. Dr.; Tijjani Adam, Shuwa (INSInet Publications, 2012)
      In fabrication of Micro/ Nano structure, alignment and exposure are the most critical steps in photolithography process, the resolution requirements and precise alignment are vital; each mask needs to be precisely aligned ...