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Electrical properties of metal-ferroelectric-insulator-semiconductor structure using BaxSr1-xTiO3 for ferroelectric-gate field effect transistor
(Elsevier Ltd., 2011-08)Perovskite ferroelectric BaxSr1-xTiO 3 (x = 0.5, 0.6, 0.7 and 0.8) thin films have been fabricated as metal-ferroelectric-insulator-semiconductor (MFIS) configurations using a sol-gel technique. The C-V characteristics for ...