Now showing items 1-3 of 3

    • Structural properties studies of GaN on 6H-SiC by means of X-ray diffraction technique 

      C. G., Ching; S. S., Ng; Z., Hassan; H., Abu Hassan (Universiti Malaysia PerlisSchool of Materials Engineering & School of Environmental Engineering, 2010-06-09)
      Epitaxial growth of GaN has become an interest topic in term of light emitting device fabrication. Most of the commercial GaN based device is normally grown on sapphire substrate. For power device application, SiC has been ...
    • XRD analyses of InxGa1-xN (0.20 x 0.80) ternary alloys 

      Yushamdan, Yusof; Muslim, A. Abid; Ng, Sha Shiong; Haslan, Abu Hassan; Zainuriah, Hassan (Universiti Malaysia PerlisSchool of Materials Engineering & School of Environmental Engineering, 2010-06-09)
      We present the structural properties of ternary InxGa1-xN (0.20 x 0.80) alloys grown on sapphire substrate by plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction (HR-XRD) analyses were used ...
    • ZnO nanorod ultraviolet photodetector on porous silicon substrate 

      Reza, Shabannia; Haslan, Abu Hassan, Prof. Dr.; Hadi Mahmodi, Sheikh Sarmast; Nima, Naderi; Husnen R., Abd (IOP Publishing Ltd, 2013)
      Vertically high-density ZnO nanorods were successfully synthesized on a porous silicon (PS) substrate by chemical bath deposition method. The structural and optical investigations revealed that the ZnO nanorods grown on ...