Now showing items 1-3 of 3

    • Fabrication of 3C-silicon carbide membranes: Towards development of novel microdevices for biomedical applications 

      Nashrul Fazli, Mohd Nasir; Charan, M. Shah; Leech, Patrick William; Reeves, Geoffrey K.; Pirogova, Elena; Istivan, Taghrid S; Tanner, Philip G.; Holland, Anthony Stephen (Institute of Electrical and Electronics Engineers (IEEE), 2012-02-27)
      3C-SiC is currently under intense study as a potential material for implantable low power blood pressure sensing due to its biocompatibility. In this work, we present and discuss the fabrication processes for n-type 3C-SiC ...
    • Properties of Al and Pd contacts on n-type SiC membranes 

      Nashrul Fazli, Mohd Nasir, Dr.; Leech, Patrick William; Holland, Anthony Stephen; Reeves, Geoffrey K.; Tanner, Philip G. (Materials Research Society, 2012-04)
      Membranes with dimensions up to 10 mm x 15 mm have been fabricated in epitaxial 3C-SiC/Si wafers. An array of CTLM metal contacts was deposited onto the upper surface of the n-SiC membrane. Both Al/n-SiC and Pd/n-SiC ...
    • Specific contact resistance of ohmic contacts to n-type SiC membranes 

      Nashrul Fazli, Mohd Nasir, Dr.; Holland, Anthony Stephen; Reeves, Geoffrey K.; Leech, Patrick William; Collins, Andrew M.; Tanner, Philip G. (Materials Research Society, 2011-04)
      Membranes of epitaxial SiC have been used as a means of eliminating the leakage current into the Si substrate during circular transmission line model (CTLM) measurements. In the n +- 3C-SiC/ Si wafers, the Si substrate was ...