Browsing by Author "H., Abu Hassan"

Now showing items 1-2 of 2

    • GaN Schottky barrier photodiode on Si (1 1 1) with low-temperature-grown cap layer 

      Chuah, Lee Siang; Z., Hassan; H., Abu Hassan; Naser Mahmoud, Ahmed (Elsevier B.V., 2009-07)
      In this work, GaN films were grown on three-inch silicon substrates by plasma-assisted molecular beam epitaxy (PAMBE) with AlN (about 200 nm) as the buffer layer. Finally, a thin AlN cap layer (50 nm) was grown on the GaN ...

    • Structural properties studies of GaN on 6H-SiC by means of X-ray diffraction technique 

      C. G., Ching; S. S., Ng; Z., Hassan; H., Abu Hassan (Universiti Malaysia PerlisSchool of Materials Engineering & School of Environmental Engineering, 2010-06-09)
      Epitaxial growth of GaN has become an interest topic in term of light emitting device fabrication. Most of the commercial GaN based device is normally grown on sapphire substrate. For power device application, SiC has been ...