Please use this identifier to cite or link to this item:
http://dspace.unimap.edu.my:80/xmlui/handle/123456789/8851
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Norainon, Mohamed | - |
dc.contributor.author | Muhamad Zahim, Sujod | - |
dc.date.accessioned | 2010-08-19T05:08:09Z | - |
dc.date.available | 2010-08-19T05:08:09Z | - |
dc.date.issued | 2009-06-20 | - |
dc.identifier.citation | p.538-543 | en_US |
dc.identifier.uri | http://dspace.unimap.edu.my/123456789/8851 | - |
dc.description | MUCEET 2009 is organized by Malaysian Technical Universities Network (MTUN) comprising of Universiti Malaysia Perlis (UniMAP), Universiti Tun Hussein Onn (UTHM), Universiti Teknikal Melaka (UTeM) and Universiti Malaysia Pahang (UMP), 20th - 22nd June 2009 at M. S. Garden Hotel, Kuantan, Pahang. | en_US |
dc.description.abstract | SiC GTO thyristor complimented by the material advantages of SiC has better characteristics than its Si GTO thyristor counterpart. The high-voltage operation of SiC is evaluated for use in inductively loaded switching circuits. Compared to purely resistively elements, inductive loads subject the switching device ti higher internal power dissipation. This paper presented two dimensional the fast-switching behavior of 4H-SiC GTO thyristor under inductive load in MATLAB/Simulink surrounding. The turn-on and turn-off characteristics of the 4H-SiC GTO thyristor compared to common Si GTO thyristor are discussed. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Universiti Malaysia Pahang (UMP) | en_US |
dc.relation.ispartofseries | Proceedings of the Malaysian Technical Universities Conference on Engineering and Technology (MUCEET) 2009 | en_US |
dc.subject | Silicon carbide (SiC) | en_US |
dc.subject | GTO thyristor | en_US |
dc.subject | Turn-off time | en_US |
dc.subject | Poisson’s equation | en_US |
dc.subject | MATLAB/Simulink | en_US |
dc.subject | Malaysian Technical Universities Conference on Engineering and Technology (MUCEET) 2009 | en_US |
dc.title | Fast-switching of 4H-SiC GTO thyristor under inductive load in MATLAB/Simulink surrounding | en_US |
dc.type | Working Paper | en_US |
Appears in Collections: | Conference Papers |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
538-543.pdf | Access is limited to UniMAP community | 573.96 kB | Adobe PDF | View/Open |
Items in UniMAP Library Digital Repository are protected by copyright, with all rights reserved, unless otherwise indicated.