Pattern designed for combination of optical lithography and electron beam lithography

Abstract

In this paper the fabricated pattern of nanometer and micrometer structures created with electron beam lithography (EBL) and optical lithography on silicon on insulator (SOI) material is presented. The resist used to demonstrate this EBL pattern creation is ma-N 2403 which is a negative tone photoresist series, while positive resist is used for transform mask design using optical lithography. Three different patterns structures are fabricated on the sample namely alignment mark, silicon nanowire and metal pad. Silicon nanowire is designed using GDS II Editor Software and exposed using SEM based EBL system while alignment mark and metal pad are designed using AutoCAD and exposed using conventional photolithography process. The fabricated structures are observed using high power microscope and SEM imaging.