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dc.contributor.authorArjuna, Marzuki-
dc.contributor.authorAli Yeon, Md. Shakaff, Prof. Dr.-
dc.contributor.authorZaliman, Sauli, Prof. Madya-
dc.date.accessioned2010-08-13T05:18:04Z-
dc.date.available2010-08-13T05:18:04Z-
dc.date.issued2009-11-01-
dc.identifier.citationIETE Journal of Research, vol. 55 (6), 2009, p. 309-314en_US
dc.identifier.issn0377-2063-
dc.identifier.urihttp://www.jr.ietejournals.org/text.asp?2009/55/6/309/59172-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/8648-
dc.descriptionLink to publisher's homepage at http://www.jr.ietejournals.org/en_US
dc.description.abstractThis paper describes how a broadband, 1.5 V, 0.85-13.35 GHz low noise amplifier in 0.15 μm 85 GHz PHEMT process is synthesized to simultaneously meet multiple design specifications such as bandwidth, noise figure, power gain and power consumption. Power-constrained synthesis technique is used to design the broadband amplifier. The simulated peak S21 is 19.8 dB, maximum noise Figure is 2.5 dB, 3-dB bandwidth is 12.5 GHz and power consumption is 73.5 mW. The calculated Figure of merit (FOM) is better than many reported broadband low noise amplifier (LNA).en_US
dc.language.isoenen_US
dc.publisherInstitution of Electronics and Telecommunication Engineers (IETE)en_US
dc.subjectBroadband amplifieren_US
dc.subjectIntegrated circuiten_US
dc.subjectMonolithic microwave integrated circuiten_US
dc.subjectOptimizationen_US
dc.subjectPower-constraineden_US
dc.subjectPseudomorphic high electron mobility transistoren_US
dc.titleA 1.5 V, 0.85-13.35 GHZ MMIC low noise amplifier design using optimization techniqueen_US
dc.typeArticleen_US
Appears in Collections:School of Microelectronic Engineering (Articles)
Ali Yeon Md Shakaff, Dato' Prof. Dr.

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