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DC Field | Value | Language |
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dc.contributor.author | Ruslinda, Abd. Rahim | - |
dc.contributor.author | Uda, Hashim, Prof. Dr. | - |
dc.contributor.author | Fukuda, Hisashi | - |
dc.contributor.author | Tada, Yoshihiro | - |
dc.contributor.author | Wainai, Noriyuki | - |
dc.contributor.author | Uesugi, Katsuhiro | - |
dc.contributor.author | Shimoyama, Yuhei | - |
dc.date.accessioned | 2010-08-13T00:59:09Z | - |
dc.date.available | 2010-08-13T00:59:09Z | - |
dc.date.issued | 2009-06-01 | - |
dc.identifier.citation | Vol. 1136, p.297-301 | en_US |
dc.identifier.issn | 0094-243X | - |
dc.identifier.uri | http://link.aip.org/link/?APCPCS/1136/297/1 | - |
dc.identifier.uri | http://dspace.unimap.edu.my/123456789/8637 | - |
dc.description | Link to publisher's homepage at http://scitation.aip.org/ | en_US |
dc.description.abstract | Metal-insulator-semiconductor field effect transistor (MISFET) structures with a nanocrystal carbon (nc-C) embedded in SiO2 thin films using a focused ion beam chemical vapor deposition (FIBCVD) system with a precursor of low energy Ga+ ion and carbon source to fabricate organic thin film transistor (OTFT) memories. The crystallinity of nc-C was investigated by Raman spectroscopy and atomic force microscopy (AFM). Raman spectra indicate the evidence of crystallization of nc-C after annealed at 600 degree celcius by the sharp peak at 1565 cm-1 in graphite (sp2), while no peak of diamond (sp3) could be seen at 1333 cm-1. The AFM images showed the nc-C dots controlled with diameter of 100 nm, 200 nm and 300 nm, respectively. The above results revealed that the nc-C dots had sufficiently stick onto SiO2 films. The characteristic of the OTFTs operated at negative gate bias shows the p-channel enhancement behavior, and shows the most saturation behavior. | en_US |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.relation.ispartofseries | Proceedings of the International Conference on Nanoscience and Nanotechnology (ICONN) 2008 | en_US |
dc.subject | Atomic force microscopy | en_US |
dc.subject | Carbon | en_US |
dc.subject | Focused ion beam | en_US |
dc.subject | Nanocrystal | en_US |
dc.subject | Organic thin film transistor | en_US |
dc.subject | Raman spectroscopy | en_US |
dc.subject | International Conference on Nanoscience and Nanotechnology (ICONN) | en_US |
dc.title | Organic thin film transistor memories with carbon nanodots fabricated by focused ion beam chemical vapor deposition | en_US |
dc.type | Working Paper | en_US |
Appears in Collections: | Conference Papers Uda Hashim, Prof. Ts. Dr. |
Files in This Item:
File | Description | Size | Format | |
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Organic thin film transistor memories with carbon nanodots fabricated by focused ion beam chemical vapor deposition.pdf | 47.23 kB | Adobe PDF | View/Open |
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