1. UniMAP Library Digital Repository
  2. The Library
  3. Conference Papers
Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/8501
Full metadata record
DC FieldValueLanguage
dc.contributor.authorYarub K. A., Al-Douri-
dc.contributor.authorUda, Hashim, Prof. Dr.-
dc.contributor.authorAhmed, N. M.-
dc.contributor.authorZaliman, Sauli, Prof. Madya-
dc.date.accessioned2010-08-06T07:23:29Z-
dc.date.available2010-08-06T07:23:29Z-
dc.date.issued2009-06-01-
dc.identifier.citationVol. 1136 (1), 2009, p. 11-15en_US
dc.identifier.isbn978-0-7354-0673-5-
dc.identifier.issn0094-243X-
dc.identifier.urihttp://link.aip.org/link/?APCPCS/1136/11/1-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/8501-
dc.descriptionLink to publisher's homepage at http://scitation.aip.org/en_US
dc.description.abstractApplication study of the quantum dot potential as a function of hydrostatic pressure for Si has been presented. This study has been calculated by means of our recent model using empirical pseudopotential method. The effect of pressure on the quantum dot potential is noticed. The results are investigated to be used in advanced technologies.en_US
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofseriesProceedings of the International Conference on Nanoscience and Nanotechnology 2009en_US
dc.subjectElemental semiconductoren_US
dc.subjectPressure effecten_US
dc.subjectQuantum-doten_US
dc.subjectInternational Conference on Nanoscience and Nanotechnologyen_US
dc.titlePressure effect on Si quantum-dot potentialen_US
dc.typeWorking Paperen_US
Appears in Collections:Conference Papers
Uda Hashim, Prof. Ts. Dr.

Files in This Item:
File Description SizeFormat 
Pressure effect on Si quantum-dot potential.pdf35.79 kBAdobe PDFView/Open
Show simple item record


Items in UniMAP Library Digital Repository are protected by copyright, with all rights reserved, unless otherwise indicated.