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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/8435
Title: A very high Q-factor inductor using MEMS technology
Authors: Khalid, N.
Singh, J.
Le, H.P.
Devlin, J.
Zaliman, Sauli, Prof. Madya
Keywords: Capacitive couplings
GHz frequencies
High Q factor
High quality
High resistivity
MEMS technology
Optimisations
Q-factors
Substrate loss
Symmetric inductors
Issue Date: 19-Jan-2009
Publisher: IEEE
Citation: p. 77-80
Series/Report no.: Proceedings of 1st Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics, PrimeAsia 2009
Abstract: This paper presents the design and optimisation of a very high Quality (Q) factor inductor using MEMS technology for 10GHz to 20GHz frequency band. The effects of various parameters of a symmetric inductor structure on the Q-factor and inductance are thoroughly analysed. The inductor has been designed on Sillcon-on-Sapphire (SOS) substrate because it offers superior characteristics of low substrate loss due to the high resistivity of the sapphire material and low capacitive coupling to the substrate. It is also been suspended from the substrate in order to reduce the substrate loss and improved the Q factor. Results indicate that a maximum Q factor of 192 for a 1.13nH inductance at 12GHz is achieved after optimising the symmetric inductor.
Description: Link to publisher's homepage at http://ieeexplore.ieee.org/
URI: http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5397444
http://dspace.unimap.edu.my/123456789/8435
ISBN: 978-142444669-8
Appears in Collections:Conference Papers

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