Theoretical and experimental study towards fabrication of nanogap dielectric biosensor by reversed spacer lithography

Abstract

A reversed spacer patterning technology using a sacrificial layer and a chemical vapor deposition (CVD) spacer layer has been developed, and is demonstrated to achieve sub-50 nm structures with conventional dry etching. The minimum-sized features are defined not by the photolithography but by the CVD film thickness. Therefore, this technology yields critical dimension (CD) variations of minimum-sized features much smaller than that achieved by conventional optical or e-beam lithography and has a great potential to fabricate a nanosystems for the electrical detection of biomolecular interactions.