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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/8172
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dc.contributor.authorUda, Hashim, Prof. Dr.-
dc.contributor.authorNur Hamidah, Abdul Halim-
dc.contributor.authorMohamad Nuzaihan, Md Nor-
dc.contributor.authorZul Azhar, Zahid Jamal, Prof. Dr.-
dc.date.accessioned2010-06-22T08:24:24Z-
dc.date.available2010-06-22T08:24:24Z-
dc.date.issued2007-08-10-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/8172-
dc.descriptionPECIPTA 2007 dianjurkan oleh Kementerian Pengajian Tinggi Malaysia (KPTM) dengan kerjasama Universiti Sains Malaysia (USM) pada 10 - 12 Ogos 2007 di Pusat Konvensyen Kuala Lumpur (KLCC), Kuala Lumpur.en_US
dc.description.abstractGenerally, two types of masks are used in MOSFET fabrication; positive mask and negative mask. These resists mask can be used either in lift off process or conventional lithography step depends on the fabrication process requirement. To achieve good resolution, Scanning Electron Microscopy (SEM) based E-beam lithography (EBL) was used to transfer the patern according the design. The patern was design in GDSII Editor in EBL System. Positive resist, Poly-methly-metacrylate (PMMA) and Negative resist, maN2403 were used as a resist in the EBL.en_US
dc.language.isoenen_US
dc.publisherKementerian Pengajian Tinggi Malaysia (KPTM)en_US
dc.relation.ispartofseriesPECIPTA 2007en_US
dc.subjectMasken_US
dc.subjectE-beam lithography (EBL)en_US
dc.subjectEBL Systemen_US
dc.subjectUniMAP -- Research and developmenten_US
dc.subjectUniMAP -- Exhibitionen_US
dc.subjectPECIPTA 2007en_US
dc.titleMask Making Process (Positive and Negative Mask)en_US
dc.typeImageen_US
dc.contributor.urluda@unimap.edu.myen_US
Appears in Collections:Zul Azhar Zahid Jamal, Dato' Prof. Dr.
Universiti Malaysia Perlis
Uda Hashim, Prof. Ts. Dr.

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