Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/78108
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dc.contributor.authorEladl, Sh. M.-
dc.contributor.authorSharshar, K. A.-
dc.contributorRadiation Engineering Dept. National Center for Radiation Research and Technology (NCRRT), Egyptian Atomic Energy Authority (EAEA)en_US
dc.creatorEladl, Sh. M.-
dc.date.accessioned2023-03-09T02:22:41Z-
dc.date.available2023-03-09T02:22:41Z-
dc.date.issued2023-01-
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.16(1), 2023, pages 53-61en_US
dc.identifier.issn1985-5761 (Printed)-
dc.identifier.issn1997-4434 (Online)-
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/78108-
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.my/en_US
dc.description.abstractThis paper is devoted to the evaluation of a Silicon/Germanium (Si/Ge) thin film structure based on experimental measurements. An electron beam evaporator was used to fabricate this structure. The sample was prepared under high vacuum conditions (pressure of 10-5 Torr, power of 6 kV and current of 200 mA). At these conditions, it was possible to get films with thickness of approximately 300 Å. The capacitance–voltage (C–V) and current–voltage (I–V) measurements of the sample were performed by a staircase sweep of voltages from 0 to 5 V and back from 5 to 0 V at room temperature. The sample exhibits a low hysteresis in measurements; this hysteresis is gradually removed when the sample is exposed to temperatures until 80 °C using a Carbolite Oven. It is also observed that both C-V and I-V characteristic curves of the sample has been smoothened. This sample exhibits an electroforming behavior as a metal-oxide-semiconductor (MOS) device over a short time duration of the selected staircase double sweep, hence it can be exploited as a fast switching element in digital microelectronic circuits. In addition, the hysteresis changes over the range from room temperature until 80 °C have opened the door to the possibility of exploiting this sample as a proximity temperature sensor within that range of temperature.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subject.otherCapacitance–Voltage (C-V)en_US
dc.subject.otherSiGe thin filmsen_US
dc.subject.otherElectron beam evaporatoren_US
dc.subject.otherMOS capacitoren_US
dc.titleExperimental performance analysis of fabricated Si/Ge thin film structureen_US
dc.typeArticleen_US
dc.identifier.urlhttp://ijneam.unimap.edu.my-
dc.contributor.urlshaban_45@yahoo.comen_US
Appears in Collections:International Journal of Nanoelectronics and Materials (IJNeaM)

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