Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/77147
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dc.contributor.authorAzhari, A. W.-
dc.contributor.authorEop, T. S.-
dc.contributor.authorChe Halin, D. S.-
dc.contributor.authorSopian, K.-
dc.contributor.authorHashim, U.-
dc.contributor.authorZaidi, S. H.-
dc.contributorFaculty of Civil Engineering Technology, Universiti Malaysia Perlis (UniMAP)en_US
dc.contributorCentre of Excellence, Water Research and Environmental Sustainability Growth, (WAREG), Universiti Malaysia Perlis (UniMAP)en_US
dc.contributorCenter of Excellence, Geopolymer and Green Technology (CEGeoGTech), Universiti Malaysia Perlis (UniMAP)en_US
dc.contributorSolar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia (UKM)en_US
dc.contributorInstitute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP)en_US
dc.contributorGratings Incorporated Albuquerque, USAen_US
dc.creatorAzhari, A. W.-
dc.date2022-
dc.date.accessioned2022-11-23T03:44:53Z-
dc.date.available2022-11-23T03:44:53Z-
dc.date.issued2022-10-
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.15 (4), 2022, pages 303-318en_US
dc.identifier.issn1985-5761 (Printed)-
dc.identifier.issn1997-4434 (Online)-
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/77147-
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.my/en_US
dc.description.abstractPolycrystalline SiGe thin films have been formed after thermal annealing of formerly vacuum evaporated a-Ge layers. The a-Ge thin films were deposited onto nanostructured Si substrates via low-cost thermal evaporation method. Then, the films were annealed in a furnace at temperatures ranging from 400 °C to 1000 °C resultin – 800 °C. The crystalline structure of the SiGe layer is improved as a function of increased temperature. This is shown by the low FWHM of about 5.27 as compared to the commercially available Ge substrates where the FWHM value is about 5.06. This method also produces more relax Ge layer where the strain value is 0.261.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subject.otherPolycrystallineen_US
dc.subject.otherSilicon germaniumen_US
dc.subject.otherThin filmen_US
dc.subject.otherSilicon nanostructuresen_US
dc.subject.otherPhotovoltaicen_US
dc.titleAnnealing effects on Polycrystalline Silicon Germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation techniqueen_US
dc.typeArticleen_US
dc.identifier.urlhttp://ijneam.unimap.edu.my-
dc.contributor.urlayuwazira@unimap.edu.myen_US
Appears in Collections:International Journal of Nanoelectronics and Materials (IJNeaM)

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