Fabrication of carbon nanotube field-effect transistor using shadow mask technique

Abstract

In this work, a new approach based on shadow mask has been reported for fabricating low-cost carbon nanotube field-effect transistor (CNFET) with interdigitated source and drain electrodes. The drop cast method is used for depositing CNTs, which was characterized using Field Emission Scanning Electron Microscope (FESEM) and RAMAN spectroscopy. The RAMAN spectroscopy confirms the deposition of CNT and SEM images demonstrated the deposition of CNT network on dielectric layer without using O2 plasma etching. Further, Keithley 4200 SCS parameter analyzer was used to perform the electrical characterization of the fabricated device. The results indicated that the fabricated CNFET follow the trend of p-type multichannel CNFET.