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dc.contributor.authorAnkita, Dixit-
dc.contributor.authorSuraj, Baloda-
dc.contributorDepartment of Electrical and Electronics Engineering, Birla Institute of Technology and Science, Pilani Rajasthan, Indiaen_US
dc.creatorNavneet, Gupta-
dc.date.accessioned2022-10-07T02:40:02Z-
dc.date.available2022-10-07T02:40:02Z-
dc.date.issued2022-07-
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.15(3), 2022, pages 189-196en_US
dc.identifier.issn1985-5761 (Printed)-
dc.identifier.issn2232-1535 (online)-
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/76370-
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.myen_US
dc.description.abstractIn this work, a new approach based on shadow mask has been reported for fabricating low-cost carbon nanotube field-effect transistor (CNFET) with interdigitated source and drain electrodes. The drop cast method is used for depositing CNTs, which was characterized using Field Emission Scanning Electron Microscope (FESEM) and RAMAN spectroscopy. The RAMAN spectroscopy confirms the deposition of CNT and SEM images demonstrated the deposition of CNT network on dielectric layer without using O2 plasma etching. Further, Keithley 4200 SCS parameter analyzer was used to perform the electrical characterization of the fabricated device. The results indicated that the fabricated CNFET follow the trend of p-type multichannel CNFET.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subject.otherCNTen_US
dc.subject.otherInterdigitated electrodeen_US
dc.subject.otherMultichannel Carbon Nanotube Field Effect Transistoren_US
dc.subject.otherShadow Mask Techniqueen_US
dc.titleFabrication of carbon nanotube field-effect transistor using shadow mask techniqueen_US
dc.typeArticleen_US
dc.contributor.urlngupta@pilani.bits-pilani.ac.inen_US
Appears in Collections:International Journal of Nanoelectronics and Materials (IJNeaM)

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